We have improved the properties of c-axis-oriented YBCO/PBCO/YBCO trilayer
junctions using planarization of YBCO films. The root-mean-square value of
the film roughness reduces to less than 60% of that of an as-grown film. Th
e junctions made through the planarization exhibit RSJ-like current-voltage
characteristics even for 20-nm-thick PBCO interlayers. The characteristic
voltage is 0.16 mV at 50 K which is remarkably improved compared to that of
junctions without the planarization.