Pm. Shadrin et al., Comparative study of electron and laser beam scanning for local electricalcharacterization of high-T-c thin films and junctions, IEEE APPL S, 9(2), 1999, pp. 3925-3928
The development of spatially resolved methods for an electrical characteriz
ation of thin films and junctions is essential for further progress in phys
ics and applications of high-temperature superconductors. Two methods, elec
tron beam and laser beam scanning, are used to get the high-resolution elec
trical images. In this paper we present the results of the comparison of el
ectron- and laser-induced responses of the same high-T-c Josephson junction
s. Using a laser-beam-induced thermoelectric response at room temperature a
nd its odd-symmetric behavior across the grain boundaries, we were able to
visualize the grain boundary faceting in bicrystal high-T-c Josephson junct
ions with the resolution of similar to 0.1 mu m.