Comparative study of electron and laser beam scanning for local electricalcharacterization of high-T-c thin films and junctions

Citation
Pm. Shadrin et al., Comparative study of electron and laser beam scanning for local electricalcharacterization of high-T-c thin films and junctions, IEEE APPL S, 9(2), 1999, pp. 3925-3928
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
9
Issue
2
Year of publication
1999
Part
3
Pages
3925 - 3928
Database
ISI
SICI code
1051-8223(199906)9:2<3925:CSOEAL>2.0.ZU;2-8
Abstract
The development of spatially resolved methods for an electrical characteriz ation of thin films and junctions is essential for further progress in phys ics and applications of high-temperature superconductors. Two methods, elec tron beam and laser beam scanning, are used to get the high-resolution elec trical images. In this paper we present the results of the comparison of el ectron- and laser-induced responses of the same high-T-c Josephson junction s. Using a laser-beam-induced thermoelectric response at room temperature a nd its odd-symmetric behavior across the grain boundaries, we were able to visualize the grain boundary faceting in bicrystal high-T-c Josephson junct ions with the resolution of similar to 0.1 mu m.