High current gain HTS Josephson vortex flow transistors

Citation
Pac. Tavares et al., High current gain HTS Josephson vortex flow transistors, IEEE APPL S, 9(2), 1999, pp. 3941-3944
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
9
Issue
2
Year of publication
1999
Part
3
Pages
3941 - 3944
Database
ISI
SICI code
1051-8223(199906)9:2<3941:HCGHJV>2.0.ZU;2-9
Abstract
We have fabricated discrete Josephson vortex flow transistors from yttrium barium copper oxide thin-films on 24 degree strontium titanate bicrystals. The devices have an asymmetric design with the control current fed through an independent control line. We have measured high current gains, in excess of 20 at 77K for a range of several devices, and substantially higher at l ower temperatures. The performance at 77K has been studied and compared wit h theoretical simulations, which have included the effects of noise.