V. Lacquaniti et al., Nb-based SNS junctions with Al and TaOx barriers for a programmable Josephson voltage standard, IEEE APPL S, 9(2), 1999, pp. 4245-4248
We report results achieved in the fabrication of two different Nb-based SNS
devices which can be used for the development of a programmable Josephson
voltage standard. Junctions with an Al metal barrier, 5 to 100 nm thick, ha
ve been fabricated obtaining devices with ICRN approximate to 0.5 mV. A sec
ond kind of junctions has been fabricated using 100 nm thick non-stabilized
TaOx as a barrier, deposited by bias sputtering. For these devices, using
the bias voltage as the main process parameter, ICRN approximate to 0.1 mV
was obtained. Measurements of the electrical properties of the Nb/Al/Nb and
the Nb/TaOx/Nb junctions are reported.