Behavior of a charged two-level fluctuator in an Al-AlOx-Al single-electron transistor in the normal and superconducting state

Authors
Kenyon, M Cobb, JL Amar, A Song, D Zimmerman, NM Lobb, CJ Wellstood, FC
Citation
M. Kenyon et al., Behavior of a charged two-level fluctuator in an Al-AlOx-Al single-electron transistor in the normal and superconducting state, IEEE APPL S, 9(2), 1999, pp. 4261-4264
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
9
Issue
2
Year of publication
1999
Part
3
Pages
4261 - 4264
Database
ISI
SICI code
1051-8223(199906)9:2<4261:BOACTF>2.0.ZU;2-#
Abstract
We have studied the behavior of a charged two-level fluctuator in an Al-AlO x-Al single-electron transistor (SET) in the normal state over a temperatur e range from 85 mK to 3 K. The fluctuator caused the SET's island charge to shift by Delta Q(o) = 0.1 +/- 0.025 e with an escape rate out of each stat e which was periodic in the gate voltage. We compare our results to a model which assumes the fluctuator resides in one of the tunnel junctions and di scuss model predictions for when the device is in the superconducting state .