Inelastic resonance tunneling in S-Sm-S tunnel structures with s- and d-wave pairing in the electrodes

Inelastic resonant tunneling via localized states (LS) in an amorphous inte rlayer located between superconducting banks with s- and d-wave symmetry of the order parameters is studied theoretically. The developed theoretical m odel is applied to the description of high T-c Josephson junctions with sem iconductor oxide interlayers. It is shown that the calculated form of the c urrent-voltage characteristics and the temperature dependence of the zero b ias conductivity fit the experimental data only if anisotropic pairing occu rs in the S-banks.