Growth and characterization of oxide buffer layers for YBCO coated conductors

Metal oxide films were grown on single crystal oxide substrates and deforma tion textured metal substrates by a metal organic deposition technique usin g metal alkoxides as the starting precursor materials. The crystallinity, g rain alignment, and morphology of the oxide films depend on the process con ditions and the substrate properties. Epitaxial oxide films were grown unde r a range of oxygen partial pressures and temperatures required for film fo rmation on technologically important metal substrates. YBCO films grown on epitaxial LaAlO3 buffer layers on single crystal SrTiO3 had J(c)'s of 2.2 M A/cm(2) (77K, self-field) demonstrating the quality of the MOD derived oxid e films.