Critical current density in highly biaxially-oriented YBCO films: Can we control J(c)(77K) and optimize up to more than 10(6) amp/cm(2)?

High-J(c) YBCO conductors of the second generation are based on processing of YBCO highly-textured film. It is important to develop deposition techniq ues to control and optimize flux pinning in such films. The dominant contri bution to net pinning force in YBCO films is from the growth-induced disloc ations. The average density of such dislocations in low-angle tilt domain b oundaries can exceed 10(11)/cm(2), For 2D flux-line lattice (FLL) correlate d disorder induced by linear defects, a simplified approach is proposed to get some optimization criteria for the critical current density as a functi on of domain size, misorientation angle, etc. During YBCO films deposition onto highly-textured buffer layers growth dislocation structures can be var ied, Comparison of the high-resolution transmission electron microscopy (HR EM) data and J(c)(H) angular dependencies for CeO2-buffered YBCO films exhi bit how the dislocation distribution can affect the angular J(c)(H) behavio r.