Simultaneous double-sided deposition of HTS films on 3-inch wafers by ICM-sputtering

The construction of a system which allows simultaneous deposition of HTS fi lms on both sides of 3-inch wafers is described. The wafers are placed in a heating cavity which can be heated to 1000 degrees C. Deposition is accomp lished through two opposite holes in the cavity by inverted cylindrical mag netron (ICM) sputtering guns. YBaCuO films deposited on 3 inch CeO2 buffere d sapphire substrates revealed a growth quality and T-c and j(c) values com parable to standard films with sufficient uniformity on both sides of the w afer. The surface resistance of the films measured in the frequency range o f 2.68 to 145 GHz is 20 m Omega at the highest frequency.