Properties of DC magnetron sputtered Nb and NbN films for different sourceconditions

We have compared the quality of Nb and NbN films obtained by de magnetron s puttering from a new and a fully eroded Nh target. Since current supercondu cting electronic devices such as SIS mixers, RSFQ digital circuits and hot electron bolometers are produced by reactive sputtering, we are interested in optimum source operating conditions over the target life time. We find t hat stress-free Nb films can, at any state of the target, be obtained under the same Ar pressure and de power applied to the sputtering source. We sho w that this approach also works for NbN reactive sputtering if the nitrogen flow rate is maintained proportional to the deposition rate of Nh In both cases the zero-stress point shifts to lower cathode de voltage as the targe t erodes. Additionally we find that the effectiveness of the magnetic trap of the magnetron influences the normal state resistivity of the NbN films.