Nondestructive magneto-optical characterization of natural and artificial defects on 3 '' HTSC wafers at liquid nitrogen temperature

Citation
J. Eisenmenger et al., Nondestructive magneto-optical characterization of natural and artificial defects on 3 '' HTSC wafers at liquid nitrogen temperature, IEEE APPL S, 9(2), 1999, pp. 1840-1843
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
9
Issue
2
Year of publication
1999
Part
2
Pages
1840 - 1843
Database
ISI
SICI code
1051-8223(199906)9:2<1840:NMCONA>2.0.ZU;2-N
Abstract
Double-sided 3 " HTSC Wafers were characterized by the magneto-optic techni que. The presented apparatus allows a nondestructive and fast detection of local and extended inhomogeneities in the critical current density with hig h lateral resolution in the micrometer range. Additional gold-layers on the HTSC wafers, as they are sometimes used for the device production, do not influence the characterization result. The high sensitivity of the presente d apparatus allows even the detection of local defects at higher temperatur e (77 K) where contrasts in the critical current are weaker and the magneto -optical characterization of HTSC thin films is much more difficult than at lower temperatures. So the apparatus can be used even under conditions whe re cooling with liquid helium or closed-cycle refrigerators is not availabl e. The sensitivity was tested on natural and artificial defects, the latter being prepared by means of a focused laser beam.