Ag-doped double-sided PLD-YBCO thin films for passive microwave devices infuture communication systems

Citation
M. Lorenz et al., Ag-doped double-sided PLD-YBCO thin films for passive microwave devices infuture communication systems, IEEE APPL S, 9(2), 1999, pp. 1936-1939
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
9
Issue
2
Year of publication
1999
Part
2
Pages
1936 - 1939
Database
ISI
SICI code
1051-8223(199906)9:2<1936:ADPTFF>2.0.ZU;2-O
Abstract
Pulsed laser deposited (PLD) Ag-doped YBa2Ca3O7-x (YBCO) thin films on both sides of 3-inch diameter sapphire wafers are used routinely for developmen t of microwave filters for future communication systems. The reproducibly d eposited YBCO:Ag films of about 250 nm thickness show critical current dens ities of 4 MA/cm(2) at 77 K and laterally homogeneous maps of microwave sur face resistance R of about 45 m Omega at 145 GHz and 77 K measured by an op en resonator technique. The R at 8.4 GHz and 77 It determined in the center position of the YBCO:Bg films with a sapphire resonator technique remains constant at about 380 mu Omega up to a microwave surface magnetic field of 7-10 mT. Correlations of transport and microwave properties to the film microstructu re are shown in terms of in-plane epitaxy, size of particulates on the film s, and composition ratios Cu/O and Y/O, and growth defects like stacking fa ults as shown by Raman spectroscopy, SEM, and SNMS depth profiling, and TEM cross sections, respectively. The optimum Ag-content of the PLD-YBCO targe t was determined to be about 4 weight -%. The results demonstrate that Ag-d oping supports the PLD process for YBCO in terms of reliability and cost ef fectiveness.