CeO2 buffer layers for YBCO: Growth and processing via sol-gel technique

In this study, the processing and growth mechanisms of CeO2 buffer layers w ere evaluated on Ni substrates for YBCO superconductor. The sol-gel techniq ue was utilized to produce buffer lavers from six different Ce based precur sor materials, The microstructure, phase composition and formation of buffe r layers were characterized by means of ESEM, SEM, EDS, XRD, pole figure XR D and DTA techniques. The results indicated that the CeO2 formation starts at temperature of 420 degrees C. It was found that the best crack free CeO2 thin films were obtained by using Ce(NO3)(3).6H(2)O and colloidal CeO2 bas ed precursor materials. Different anions and their concentrations also infl uenced the structure of thin films.