Interfacial microstructure in Si-on-sapphire heterostructure

A combination of experimental techniques: high-resolution X-ray diffraction (HXRD), high-resolution cross-sectional electron microscopy (HREM), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were employed to elucidate the interfacial microstructure in Si-on-sapphire sys tem. The observed structural features and their role in the strain relievin g mechanism at the interface are discussed. Chemical analysis shows that to some extent bonds like in aluminosilicates and SiO2 are formed in the inte rfacial layer. (C) 1999 Elsevier Science B.V. All rights reserved.