AlGaInAs/InP strained-layer quantum well lasers at 1.3 mu m grown by solidsource molecular beam epitaxy

AlxGayIn1-x-yAs/InP strained-layer multiple-quantum-well lasers emitting at 1.3 mu m have been grown by solid source molecular beam epitaxy, and the p erformance characteristics have been studied. The lasers contain 4, 5, or 6 compressively strained quantum wells in the active region. They exhibit lo w transparency current densities, high gain coefficients, and high characte ristic temperatures compared to conventional GaInAsP/InP quantum well laser s. The results show that desired lasing features can be achieved with relat ively simple layer structures if the doping profiles and waveguide structur es are properly designed and the material is grown to high structural perfe ction.