Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy

Authors
Fang, ZQ Xie, QH Look, DC Ehret, J Van Nostrand, JE
Citation
Zq. Fang et al., Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy, J ELEC MAT, 28(8), 1999, pp. L13-L16
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
8
Year of publication
1999
Pages
L13 - L16
Database
ISI
SICI code
0361-5235(199908)28:8<L13:ECOSIQ>2.0.ZU;2-W
Abstract
We have investigated electron emission from self-assembled In0.5Ga0.5As/GaA s quantum dots (QDs) grown by molecular-beam epitaxy (MBE). Through detaile d deep level transient spectroscopy comparisons between the QD sample and a reference sample, we determine that trap D, with an activation energy of 1 00 meV and an apparent capture cross section of 5.4 x 10(-18) cm(2), is ass ociated with an electron quantum level in the In0.5Ga0.5As/GaAs QDs. The ot her deep levels observed, M1, M3, M4, and M6, are common to GaAs grown by M BE.