Insertion of In(III) and Ga(III) into MPS3 (M = Mn, Cd) layered materials

In(0.20)Mr(0.70)PS(3), Ga0.28Cd0.58PS3 and In0.33Cd0.50PS3 compounds were s ynthesized by insertion of trivalent cations (In3+ and Ga3+) into MPS3 (M = Mn, Cd). The insertion process requires the previous intercalation of K+ i ons into these matrices, giving rise to new materials belonging to the MPS, family. Such compounds were characterized by X-ray diffraction (XRD). Four ier transform infrared (FTIR) spectroscopy, scanning electron microscopy (S EM), transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) microprobe, differential thermal and thermogravimetric analyses (DTA/TGA), magnetic susceptibility measurements, and electrochemical impedance spectro scopy. It is inferred that the trivalent cations were incorporated, rather than intercalated, into the intralamellar region, i.e., the cations were lo cated in the interlamellar space, following the typical topotactic ion-exch ange processes of the monovalent cations. Clement and Michowicz reported a similar case for Ni2+ insertion into MnPS3 in 1984. (C) 1999 Elsevier Scien ce Ltd.