Y. Iye et al., Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors, MAT SCI E B, 63(1-2), 1999, pp. 88-95
Structural, magnetic and transport properties of diluted magnetic semicondu
ctors, (Ga, Mn)As and (In, Mn)As, have been investigated. Manganese can be
substitutionally doped into the group III site of the zincblend structure u
p to several percent. With Mn content of a few percent, these systems exhib
it ferromagnetism at low temperatures. The highest Curie temperature so far
achieved is similar to 100 K for (Ga, Mn)As. The saturated magnetization v
alues are consistent with S = 5/2 local moment, suggesting divalent Mn whic
h acts as an acceptor. The system becomes metallic with increasing Mn conte
nt, but a further increase of Mn content tends to decrease the hole density
and increase disorder so that the system becomes nonmetallic again at high
er Mn concentrations. Large negative magnetoresistance and highly anisotrop
ic transport are observed in the semiconducting samples at low temperatures
. The magnetic anisotropy in ultrathin films is found to be strongly affect
ed by the lattice-mismatch-induced strain. (C) 1999 Elsevier Science B.V. A
ll rights reserved.