Characterization of silicon nanocrystals and photoluminescence quenching in solution

Citation
In. Germanenko et al., Characterization of silicon nanocrystals and photoluminescence quenching in solution, NANOSTR MAT, 12(5-8), 1999, pp. 731-736
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOSTRUCTURED MATERIALS
ISSN journal
09659773 → ACNP
Volume
12
Issue
5-8
Year of publication
1999
Part
B
Pages
731 - 736
Database
ISI
SICI code
0965-9773(199907)12:5-8<731:COSNAP>2.0.ZU;2-K
Abstract
Weblike aggregates of coalesced Si nanocrystals are prepared by the Laser V aporization-Controlled Condensation (LVCC) method. Upon excitation with vis ible or UV light, the Si nanocrystals show red photoluminescence whose mult iexponential time decays are characterized by lifetimes that range from 20 - 80 mu s, depending on the emission wavelength. This red emission can be q uenched with electron acceptors like 1,4-dinitrobenzene and WO3 nanoparticl es. The quenching rate constants obtained from a Stern-Volmer analysis are 7.65 x 10(6) (Ms)(-1) and 14.1 x 10(6) (Ms)(-1) for 1,4-dinitrobenzene and WO3 nanoparticles, respectively. The quenching mechanism appears to proceed via an electron transfer from the CB band of the Si nanocrystals to the qu enchers. (C)1999 Acta Metallurgica Inc.