On electron-electron scattering mechanisms in 2D degenerated systems

Authors
Buhmann, H Gurzhi, RN Kalinenko, AN Kopeliovich, AI Molenkamp, LW Yanovsky, AV
Citation
H. Buhmann et al., On electron-electron scattering mechanisms in 2D degenerated systems, NANOSTR MAT, 12(5-8), 1999, pp. 835-838
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOSTRUCTURED MATERIALS
ISSN journal
09659773 → ACNP
Volume
12
Issue
5-8
Year of publication
1999
Part
B
Pages
835 - 838
Database
ISI
SICI code
0965-9773(199907)12:5-8<835:OESMI2>2.0.ZU;2-N
Abstract
The detailed quantitative theory of electron-electron scattering processes in 2D electron degenerated systems in GaAs(AlGaAs) heterostructures has bee n developed on the basis of analytical treatment and numerical calculations . We have found the conditions and intervals of values of the characteristi c parameters in which specific properties of 2D relaxation predicted previo usly on the theoretical. level manifest themselves. New effects, i.e. a sec ondary beam of electrons scattered back and a very narrow beam of holes mov ing: in the direction of injection, have been found. (C)1999 Acta Metallurg ica Inc.