Effect of swift high energy phosphorous ions on the optical and electricalproperties of porous silicon

Authors
Gokarna, A Bhave, TM Bhoraskar, SV Kanjilal, D
Citation
A. Gokarna et al., Effect of swift high energy phosphorous ions on the optical and electricalproperties of porous silicon, NUCL INST B, 156(1-4), 1999, pp. 100-104
Citations number
7
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
156
Issue
1-4
Year of publication
1999
Pages
100 - 104
Database
ISI
SICI code
0168-583X(199907)156:1-4<100:EOSHEP>2.0.ZU;2-J
Abstract
aEffect of high energy ion irradiation over the doping characteristics and transport properties as well as photoluminescence from porous silicon is di scussed in this paper. The samples were irradiated with 5 and 26 MeV phosph orous ions, fluences varying between 1x10(11)-5x10(13) ions/cm(2). The irra diated samples were subjected to photoluminescence spectroscopy, Hall measu rements and junction I-V characteristics. The results are discussed in view of the doping characteristics of phosphorous ions in the porous lattice. T he role of chemical complexes in tailoring the photoluminescence behaviour is also discussed. (C) 1999 Published by Elsevier Science B.V. All rights r eserved.