High energy heavy ion irradiation in semiconductors

Pd/n-Si and Pd/n-GaAs devices have been irradiated from high energy (simila r to 100 MeV) heavy ions of Au7+ (gold) and Si7+ (silicon) to study the irr adiation effects in these junction devices on semiconductor substrates. The devices have been characterized from I-V and C-V studies for electronic fl ow characterization. It has been found that the devices become high resisti ve on the irradiation and the substrates change the conductivity type from n- to p- on the irradiation of fluence of similar to 10(12)-10(13) ions/cm( 2). The change in conductivity type has been understood as a result of crea tion of deep accepters on the irradiation. (C) 1999 Elsevier Science B.V. A ll rights reserved.