FTIR studies of swift silicon and oxygen ion irradiated porous silicon

Fourier Transform Infrared Spectroscopy has been used to study the bond res tructuring in silicon and oxygen irradiated porous silicon. Boron doped p-t ype (111) porous silicon was irradiated with 10 MeV silicon and a 14 MeV ox ygen ions at different doses ranging between 10(12) and 10(14) ions cm(-2). The yield of PL in porous silicon irradiated samples was observed to incre ase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher dose s. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds. (C) 1999 El sevier Science B.V. All rights reserved.