On-line study of ion beam induced mixing at interface by swift heavy ions

One of the useful aspects generated by the swift heavy ion (SHI) is the irr adiation induced mixing at the interface, reported in the recent past. We h ave studied such mixing on-line, an aspect which has not been studied so fa r. On-line studies have been performed on mixing in Fe/Si and CuO/glass sys tems induced by electronic excitation. This work reports on the dependence of mixing on the electronic excitation. It is observed that about 56 atoms of Fe and 85 atoms of Si mix with each other for each incident Au ion of 23 0 MeV and 33 atoms of Fe and 33 atoms of Si mix with each other for each in cident I ion of 210 MeV. Similarly about 28 atoms of Cu and 26 atoms of Si from glass mix with each other for each incident I ion of 210 MeV. It is al so shown that mixing in Fe/Si does not take place, if the oxygen concentrat ion at the interface is high. (C) 1999 Elsevier Science B.V. All rights res erved.