METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF FERROELECTRIC PB(ZRXTI1-X)O-3 THIN-FILMS

Ferroelectric Pb(ZrxTi1-x)O-3 (PZT) thin films were successfully depos ited on Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposi tion (MOCVD). Pb(C2H5)(4), Zr(O-t-C4H9)(4), and Ti(O-i-C3H7)(4) were u sed as metalorganic precursors. Variations in crystalline structure, s urface morphology, and grain size of deposited films were systematical ly investigated as a function of process parameters by using X-ray dif fraction and scanning electron microscopy. The deposition temperature and gas composition in the reactor are the main parameters that contro l the microstructure and composition of films. An interrelationship be tween the grain orientation and surface roughness of the films was fou nd. Films with (111) preferred orientation are significantly smoother than films with other preferred orientations. The ferroelectric proper ties of the films were also measured by RT66A ferroelectric tester for hysteresis loop and fatigue property. Electrical measurements reveale d that the films had good ferroelectric characteristics with the high remanant polarization (32 mu C/cm(2)) and low coercive voltage (1.1 V) .