Low-temperature dielectric relaxation peaks involving proton tunneling in Ba1-xNdxCeO3

Citation
I. Kuskovsky et al., Low-temperature dielectric relaxation peaks involving proton tunneling in Ba1-xNdxCeO3, PHYS REV B, 60(6), 1999, pp. R3713-R3715
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
6
Year of publication
1999
Pages
R3713 - R3715
Database
ISI
SICI code
0163-1829(19990801)60:6<R3713:LDRPIP>2.0.ZU;2-9
Abstract
An investigation of dielectric relaxation at relatively low-temperature (55 -225 K) of the protonic conductor Ba1-xNdxCeO3, for x = 0.05, has revealed a major dielectric relaxation peak, as well as an associated smaller peak, with characteristics that strongly suggest proton tunneling. In particular, the relaxation rate is almost constant between 55 and 85 K. The nature of the dipolar defect that can give rise to such a peak is considered. [S0163- 1829(99)50630-9].