Crystal-field study in rare-earth-doped semiconducting YBiPt

Citation
Pg. Pagliuso et al., Crystal-field study in rare-earth-doped semiconducting YBiPt, PHYS REV B, 60(6), 1999, pp. 4176-4180
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
6
Year of publication
1999
Pages
4176 - 4180
Database
ISI
SICI code
0163-1829(19990801)60:6<4176:CSIRSY>2.0.ZU;2-M
Abstract
Electron spin resonance (ESR) and magnetic-susceptibility experiments in th e rare-earth-doped (R = Nd, Er, and Yb) cubic semiconducting YBiPt allow es timates of the fourth (A(4)) and sixth (A(6)) order crystal-field parameter s for this compound. It is found that these parameters are of the same orde r for all the R studied. On the other hand, no crystal-field effects were f ound for the Gd3+ doped single-crystal system. Consistent with the small ga p semiconducting character of the YBiPt intermetallic compound, a Dysonian ESR line shape with no g shift and Korringa broadening was observed. [S0163 -1829(99)10925-1].