Particle detection properties of charge coupled devices

A detailed quantitative analysis of particle events observed in Charge Coup led Devices (CCDs) requires the knowledge of particle detection properties of the employed CCDs such as the detection threshold for energy deposition, efficiency for different kinds of radiation and the relation between the s ignal and the deposited energy inside the sensitive volume. For this purpos e the CCD-chip was described by a simple geometrical model containing the e ffective thicknesses of the p-n semiconductor junctions d(j) and a covering dead layer d(T) above them as parameters. The corresponding geometrical qu antities were experimentally estimated to be 1.3 mu m and 0.9 mu m respecti vely by using different kinds of radiation.