Piezoresistive effect in p-type polycrystalline diamond films

The piezoresistive effect of boron-doped polycrystalline diamond films was analyzed and discussed by the famous M-S polycrystalline model. It is found that the valence bands splitting-off and the grain-boundary scattering are the main factors responsible for the piezoresistive effect in the p-type p olycrystalline diamond films. The gauge-factor calculation formula includin g the effect of both background scattering and grain-boundary scattering we re obtained, and the calculation results are in accordance with the experim ental results.