(CPDT-STF)(TCNQ): a new charge-transfer complex metallic down to low temperature

Citation
M. Taniguchi et al., (CPDT-STF)(TCNQ): a new charge-transfer complex metallic down to low temperature, SOL ST COMM, 111(10), 1999, pp. 559-564
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
111
Issue
10
Year of publication
1999
Pages
559 - 564
Database
ISI
SICI code
0038-1098(1999)111:10<559:(ANCCM>2.0.ZU;2-P
Abstract
A new charge transfer complex (CPDT-STF)(TCNQ) has been prepared. An X-ray crystal structure analysis revealed that this complex is composed of the do nor and acceptor sheets orthogonally arranged to each other, which is simil ar to (ET)(TCNQ) and (ET)(TCNQF(1)). The band calculations indicate that th e CPDT-STF layer has a significantly two-dimensional interaction, while the TCNQ one has a one-dimensional Fermi surface. The electrical resistivity o f the present complex showed metallic temperature dependence down to 0.6 K. The thermoelectric power was negative and changed from the positive to the negative gradient at 60 K. The static magnetic susceptibility and transpor t properties indicate coexistence of local and itinerant electrons in the p resent complex. (C) 1999 Published by Elsevier Science Ltd. All rights rese rved.