Influence of growth conditions on the incorporation of substitutional C inSi1-x-yGexCy alloy on Si by chemical vapor deposition using C2H4

Authors
Jiang, N Zang, L Jiang, RL Zhu, SM Han, P Liu, XB Cheng, XM Wang, RH Zheng, YD Hu, XN Fang, JX
Citation
N. Jiang et al., Influence of growth conditions on the incorporation of substitutional C inSi1-x-yGexCy alloy on Si by chemical vapor deposition using C2H4, APPL PHYS A, 68(4), 1999, pp. 457-460
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
68
Issue
4
Year of publication
1999
Pages
457 - 460
Database
ISI
SICI code
0947-8396(199904)68:4<457:IOGCOT>2.0.ZU;2-C
Abstract
Thin heteroepitaxial films of Si1-x-yGexCy have been grown on Si(100) subst rates by rapid thermal chemical vapor deposition (RTCVD) using C2H4 as C so urce. The composition and microstructure of Si1-x-yGexCy films were charact erized by Auger electron spectroscopy, Raman spec tra and Fourier-transform infrared spectroscopy. The results show that lower temperature and higher SiH4/C2H4 flow ratio are helpful in forming the substitutional C and improv ing the crystal quality. A possible mechanism for C incorporation in Si1-x- yGexCy layers grown by RTCVD using C2H4 is proposed.