Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 mu m GaInNAs three-quantum-well laser diodes

We report organometallic vapor-phase epitaxy (OMVPE) growth and optical cha racteristics of 1.17-1.20 mu m double-heterostructure laser diodes with thr ee Ga0.7In0.3N0.003As0.997 (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs Q Ws). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethyl hydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17-1.19 mu m regime with a full width at half maximum of 33 meV has b een routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current d ensity of 1.2 kA/cm(2) has been successfully demonstrated. (C) 1999 America n Institute of Physics. [S0003-6951(99)02834-X].