Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers

Transverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blend e InxGa1-xN (0 less than or equal to x less than or equal to 0.31) layers a re observed through first-order micro-Raman scattering experiments. The sam ples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ra y diffraction measurements are performed to determine the epilayer alloy co mposition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Rama n data reported here are used to predict the A(1) (TO) and E-1 (TO) phonon frequencies of the hexagonal InxGa1-xN alloy. (C) 1999 American Institute o f Physics. [S0003-6951(99)01234-6].