Heterointerface quality of InGaP-GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy

Data are presented on the room-temperature, photopumped, continuous laser o peration of multiple-well InGaP-GaAs quantum-well heterostructures and supe rlattices grown by low-pressure metalorganic chemical vapor deposition. Con tinuous laser operation at room temperature indicates high material quality and minimal nonradiative recombination at the heterointerfaces. The lasing wavelength near the GaAs band gap is consistent with weak bandfilling, and small quantum confinement of electrons and large confinement of holes (m(h )> m(e), Delta E-v>Delta E-c). Double-crystal x-ray diffraction and transmi ssion electron microscopy data confirm the high material quality and hetero interface abruptness. (C) 1999 American Institute of Physics. [S0003-6951(9 9)03534-2].