Refractive index and hygroscopic stability of AlxGa1-xAs native oxides

Citation
Dc. Hall et al., Refractive index and hygroscopic stability of AlxGa1-xAs native oxides, APPL PHYS L, 75(8), 1999, pp. 1110-1112
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
8
Year of publication
1999
Pages
1110 - 1112
Database
ISI
SICI code
0003-6951(19990823)75:8<1110:RIAHSO>2.0.ZU;2-T
Abstract
We present prism coupling measurements on AlxGa1-xAs native oxides showing the dependence of refractive index on composition (0.3 less than or equal t o x less than or equal to 0.97), oxidation temperature (400 less than or eq ual to T less than or equal to 500), and carrier gas purity. Index values r ange from n = 1.490 (x = 0.9, 400 degrees C) to 1.707 (x = 0.3, 500 degrees C). The oxides are shown to adsorb moisture, increasing their index by up to 0.10 (7%). Native oxides of AlxGa1-xAs (x less than or equal to 0.5) hav e index values up to 0.27 higher and are less hygroscopic when prepared wit h a small amount of O-2 in the N-2+H2O process gas. The higher index values are attributed to a transition from a hydroxide to a denser (AlxGa1-x)(2)O -3 oxide phase. (C) 1999 American Institute of Physics. [S0003-6951(99)0043 4-9].