Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

Polycrystalline SrBi2Ta2O9 ferroelectric thin films were grown on Pt/Ti/SiO 2/Si substrates using pulsed-laser deposition. By adjusting the laser fluen ce, we could successfully control remnant polarization of the films. In a n arrow fluence range of 1.0-1.5 J/cm(2), films with large remnant polarizati ons (as high as 18.7 mu C/cm(2)) could be obtained. The choice of an optima l laser fluence was found to be very important to control electrical proper ties of the films. From electron-probe microanalysis, it was demonstrated t hat the Bi content is closely related with the remnant polarization. (C) 19 99 American Institute of Physics. [S0003-6951(99)03234-9].