High-density InAs nanowires realized in situ on (100) InP

Authors
Li, HX Wu, J Wang, ZG Daniels-Race, T
Citation
Hx. Li et al., High-density InAs nanowires realized in situ on (100) InP, APPL PHYS L, 75(8), 1999, pp. 1173-1175
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
8
Year of publication
1999
Pages
1173 - 1175
Database
ISI
SICI code
0003-6951(19990823)75:8<1173:HINRIS>2.0.ZU;2-A
Abstract
High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabric ated in situ by molecular beam epitaxy on (100) InP. The average cross sect ion of the nanowires is 4.5 x 10 nm(2). The linear density is as high as 70 wires/mu m. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarization anisotropic eff ect is observed in polarized photoluminescence measurements. (C) 1999 Ameri can Institute of Physics. [S0003-6951(99)04134-0].