Growth of SrTiO3 and BaTiO3 thin films by atomic layer deposition

SrTiO3 and BaTiO3 thin films were deposited by atomic layer deposition maki ng use of a novel class of strontium and barium precursors, i.e., their cyc lopentadienyl compounds, together with titanium tetraisopropoxide and water . SrTiO3 films were grown at 325 degrees C from strontium bis(triisopropylc yclopentadienyl) and BaTiO3 at 275 degrees C from barium bis(pentamethylcyc lopentadienyl). After annealing in air at 500 degrees C, permittivities of 180 and 165 were measured for SrTiO3 and BaTiO3, respectively. The films sh owed excellent conformality and complete filling of test trench structures. (C) 1999 The Electrochemical Society. S1099-0062(99)05-021-X. All rights r eserved.