The quality of the gate oxide grown by using both wet and dry oxidation has
been studied with respect to the local oxidation atmosphere. Dedicated tes
ts have shown that the difference between wet- and dry-grown gate oxide is
strongly influenced by the previous local oxidation process. A superior qua
lity of wet gate oxide is evident if wet local oxidation has been used, whi
le negligible dependence of gate oxide quality on the gate oxidation ambien
t is obtained when dry local oxidation is applied. (C) 1999 The Electrochem
ical Society. S1099-0062(99)03-110-7-X. All rights reserved.