On the better quality of wet-grown gate oxides

Citation
P. Bellutti et N. Zorzi, On the better quality of wet-grown gate oxides, EL SOLID ST, 2(10), 1999, pp. 525-526
Citations number
10
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
2
Issue
10
Year of publication
1999
Pages
525 - 526
Database
ISI
SICI code
1099-0062(199910)2:10<525:OTBQOW>2.0.ZU;2-3
Abstract
The quality of the gate oxide grown by using both wet and dry oxidation has been studied with respect to the local oxidation atmosphere. Dedicated tes ts have shown that the difference between wet- and dry-grown gate oxide is strongly influenced by the previous local oxidation process. A superior qua lity of wet gate oxide is evident if wet local oxidation has been used, whi le negligible dependence of gate oxide quality on the gate oxidation ambien t is obtained when dry local oxidation is applied. (C) 1999 The Electrochem ical Society. S1099-0062(99)03-110-7-X. All rights reserved.