Measurement technique for determining impact ionisation in HEMTs

Authors
Gaquiere, C Miraumont, P Crosnier, Y
Citation
C. Gaquiere et al., Measurement technique for determining impact ionisation in HEMTs, ELECTR LETT, 35(14), 1999, pp. 1146-1147
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
14
Year of publication
1999
Pages
1146 - 1147
Database
ISI
SICI code
0013-5194(19990708)35:14<1146:MTFDII>2.0.ZU;2-K
Abstract
A new measurement method is presented for determining when the impact ionis ation (I-I) effect occurs in HEMTs. Until now the gate current or side gate current have been used as criteria, whereas in this letter the noise facto r is used. As will be described, this method is more accurate and less harm ful to the devices.