Citation
S. Maikap et al., NO/O-2/NO plasma-grown oxynitride films on strained-Si1-xGex, ELECTR LETT, 35(14), 1999, pp. 1202-1203
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
35
Issue
14
Year of publication
1999
Pages
1202 - 1203
Database
ISI
SICI code
0013-5194(19990708)35:14<1202:NPOFOS>2.0.ZU;2-W
Abstract
The growth and electrical properties of high quality ultrathin oxide and ox
ynitride films on strained-Si0.74Ge0.26 layers using microwave O-2, NO and
NO/O-2/NO-plasma are reported. A significant improvement in the dielectric
endurance and charge trapping behaviour under Fowler-Nordheim (F-N) constan
t current stressing is observed for NO/O-2/NO grown oxynitride films.