Electrical properties and microstructural evolution of porous Pb1-xCaxTiO3pyroelectric thin films

The properties of Pb1-xCaxTiO3 (x=0-30) thin films for applications in poin t-detectors and arrays can be further improved ii porous, low-dielectric co nstant layers are being Used. Both 2-methoxyethanol and 1,3-propanediol bas ed solution precursors were used for spin-coating platinized Si3N4/SiO2/Si wafers. The heating-rate during the final anneal was observed to be the con trolling parameter for the evolution of either dense or porous microstructu res, Low temperature crystallization of the perovskite phase (T<400 degrees C) during fast heating at 60 degrees C/s and the difference in the microst ructural evolution of dense and porous films were studied by Rutherford bac kscattering spectroscopy, XRD, SEM and TEM, Microstructure-property relatio nships and electrical properties concerning the domain mobility were examin ed.