RF-sputtered PZT thin films for infrared sensor arrays

PZT thin films prepared by RF sputtering of a ceramic target of composition Pb(Zr-0.25 Ti-0.75)O-3 Show different textures with respect to sputtering conditions adopted. The films prepared were under high stress as shown by t he stress measurements. PZT-microstructures with Pt electrodes sputtered on silicon wafers were investigated using the Raman peak of the single crysta lline silicon. The Raman shift profiles were found to be dependent on the p articular geometry of the investigated structures. Infrared sensor arrays d escribed in this paper were fabricated with multitarget sputtered 1 mu m PZ T thin films. The array with 256 sensitive elements exhibits a noise equiva lent power (NEP) of 0.42 nW at 20 Hz.