Poling of ferroelectric thin films

Citation
M. Kohli et P. Muralt, Poling of ferroelectric thin films, FERROELECTR, 225(1-4), 1999, pp. 961-968
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
FERROELECTRICS
ISSN journal
00150193 → ACNP
Volume
225
Issue
1-4
Year of publication
1999
Pages
961 - 968
Database
ISI
SICI code
0015-0193(1999)225:1-4<961:POFTF>2.0.ZU;2-R
Abstract
Poling of lead zirconate titanate pyroelectric thin films has been studied. Poling temperature and electrical field were optimized to achieve high fig ures of merit. We have found a direct correlation between the onset of degr adation current and the final pyroelectric coefficient showing that thermal activation for defect motion is imperative for poling. We have proposed th at defects and defect dipole complexes play a major role to obtain stable a nd metastable domain configurations after dc poling at high temperature and field cycling, respectively.