Effect of grain size on degradation of Pt/PLZT/Pt capacitor

The effect of grain size on electric properties has been investigated. Vari ous (111) oriented PLZT films were prepared using the RF magnetron sputteri ng method on Pt/Ti/SiO2/Si substrates. Grain size and surface roughness wer e observed by AFM. The results showed that; 1) surface roughness depends on average grain size and 2) decreasing grain size decreases process degradat ion and fatigue. The grain boundary was thought to be responsible for proce ss damage, such as reduction by hydrogen, at electrode interface tops. Elec tric field strength at grain boundaries also increased with increases in su rface roughness.