Influence of the deposition parameters controlled by OES on PZT thin film properties deposited by RF magnetron sputtering

Lead zirconate titanate (PZT) thin films have been deposited, in a reactive argon/oxygen gas mixture, from a metallic target of nominal composition Pb -1.1(Zr-0.4 Ti-0.6) by rf magnetron sputtering on Si substrates and Pt/TiN/ Ti/SiO2/Si structures. During plasma deposition, in situ Optical Emission S pectroscopy (OES) measurements show clearly a correlation between the oxyge n emission line evolution and the thin film composition.;As a result, the c athode surface state can be controlled by OES to ensure a good compositiona l transferability from the target to the film and reproducibility of thin f ilm properties for given values of deposition parameters. Using this approa ch, and after annealing of as-deposited thin films by Rapid Thermal Anneali ng (RTA), the PZT films exhibited a well-saturated hysteresis loop at an ap plied electric field of 300 kV/cm with P-r of 48 mu C/cm(2); the dielectric constant and dissipator factor at a frequency of 100 kHz were 914 and 0.04 , respectively.