Characterization of Pt thin films deposited by DC sputtering at different temperatures on Ti/glass and TiO2/Si substrates

Pt thin films were deposited on Ti/Glass and TiO2/Si substrates by DC sputt ering at temperatures between room and 700 degrees C to optimize its perfor mance as electrodes for ferroelectric devices. Well oriented films in the ( 111) direction were obtained. Auger electron spectroscopy showed the presen ce of Ti on the surface of both systems: Pt/Ti/Glass and Pt/TiO2/Si, eviden cing a diffusion of Ti through the Pt film. STM studies showed an increase in grain size with temperature up to 600 degrees C. Terraces and steps can be observed above this temperature for Pt films on Ti substrates; and a com bination of big and small grains for Pt on TiO2. The spectroellipsometric s tudies evidenced a decrease in the packing density of the films as the temp erature was risen. Good adherence of Pt is observed for both substrates.