Preparation of La1-xSrxCoO3 electrodes for ferroelectric thin films by RF magnetron sputtering

Authors
Masumoto, H Hiboux, S Muralt, P
Citation
H. Masumoto et al., Preparation of La1-xSrxCoO3 electrodes for ferroelectric thin films by RF magnetron sputtering, FERROELECTR, 225(1-4), 1999, pp. 1141-1147
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
FERROELECTRICS
ISSN journal
00150193 → ACNP
Volume
225
Issue
1-4
Year of publication
1999
Pages
1141 - 1147
Database
ISI
SICI code
0015-0193(1999)225:1-4<1141:POLEFF>2.0.ZU;2-9
Abstract
(100)-oriented stoichiometric LSCO films were deposited on Pt/TiO2/SiO2/Si, TiO2/Pt/TiO2/SiO2/Si and Si substrates with rf magnetron sputtering using a single self fabricated oxide target. Best conductive LSCO film was obtain ed at 600 degrees C, yielding a specific resistivity of 90 mu Ohm cm. The P ZT film deposited on the LSCO(100) electrode oriented to (100) or (001). Ma ximum value of d(33) coefficientwas 73.5 pm/V.