Chemically prepared Cd1-xZnxSe thin films: A correlation between compositional and structural analysis

The structural changes caused by the deliberate addition of Zn2+ into the l attice of CdSe have been investigated. Various Cd1-xZnxSe3 (0 less than or equal to x less than or equal to 1) thin film structures were fabricated on the glass substrates at a deposition temperature of 70.2 degrees C. The fi lm composition was-determined and compared with the bath composition. A non -linear relation has been observed between them. The XRD studies revealed a mixed structure (hexagonal and cubic) for CdSe whereas ZnSe films were cub ic only. The structure of the Cd1-xZnxSe films is composition-dependent. It has been observed that Cd1-xZnxSe films are hexagonal wurtzite in structur e for 0 less than or equal to x less than or equal to 0.2 wherein Zn2+ ente rs into the lattice of CdSe as a dopant. For 0.2 less than or equal to x le ss than or equal to 0.7. The films have been composed of the mixed phases o f CdSe and ZnSe. It is interesting to note that CdSe and ZnSe form a solid solution for 0.7 less than or equal to x less than or equal to 1 which was indicated by the change in colour of the sample and shift in the peak posit ion through d-increasing typically from 3.279 to 3.334 Angstrom. The lattic e parameter (LP) varied continuously from 5.681 to 5.776 Angstrom for this range. Some reflections of SeO2, elemental Zn and ZnO have also been detect ed for higher x-values.