Transformation of quantum size levels into virtual levels at the boundary between p-GaAs and an AlAs/GaAs superlattice

Authors
Al'perovich, VL Tkachenko, BA Tkachenko, OA Moshegov, NT Toropov, AI Yaroshevich, AS
Citation
Vl. Al'Perovich et al., Transformation of quantum size levels into virtual levels at the boundary between p-GaAs and an AlAs/GaAs superlattice, JETP LETTER, 70(2), 1999, pp. 117-122
Citations number
12
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
70
Issue
2
Year of publication
1999
Pages
117 - 122
Database
ISI
SICI code
0021-3640(19990725)70:2<117:TOQSLI>2.0.ZU;2-I
Abstract
The transformation of quantum size levels into virtual levels upon a change in the electric field in an AlAs/GaAs superlattice located in the i region of a p-i-n structure is studied experimentally and theoretically. It is sh own that an interfacial state at the boundary between the superlattice and the p-GaAs contact layer results in a resonant increase in the probability of photoelectron tunneling from the contact into the superlattice via Wanni er-Stark levels. (C) 1999 American Institute of Physics. [S0021-3640(99)009 14-7].